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ZXM61N02F
ELECTRICAL CHARACTERISTICS (at T A = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.(3) MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
20
V
I D =250 μ A, V GS =0V
Zero Gate Voltage Drain Current
I DSS
1
μ A
V DS =20V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS = ± 12V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
0.7
V
I D =250 μ A, V DS = V GS
Static Drain-Source On-State Resistance
(1)
R DS(on)
0.18
0.24
?
?
V GS =4.5V, I D =0.93A
V GS =2.7V, I D =0.47A
Forward Transconductance (3)
g fs
1.3
S
V DS =10V,I D =0.47A
DYNAMIC (3)
Input Capacitance
C iss
160
pF
Output Capacitance
C oss
50
pF
V DS =15 V, V GS =0V,
f=1MHz
Reverse Transfer Capacitance
C rss
30
pF
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
2.4
ns
Rise Time
Turn-Off Delay Time
t r
t d(off)
4.2
7.8
ns
ns
V DD =10V, I D =0.93A
R G =6.2 ? , R D =11 ?
(refer to test
Fall Time
t f
4.2
ns
circuit)
Total Gate Charge
Q g
3.4
nC
Gate-Source Charge
Q gs
0.41
nC
V DS =16V,V GS =4.5V,
I D =0.93A
Gate-Drain Charge
Q gd
0.8
nC
(refer to test
circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
0.95
V
T J =25°C, I S =0.93A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t rr
Q rr
12.9
5.2
ns
nC
T J =25°C, I F =0.93A,
di/dt= 100A/ μ s
NOTES
(1) Measured under pulsed conditions. Width ≤ 300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
4
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